Dual wavelength laser thermal processing of semiconductors
Abstract
A method for optimizing the annealing of ion implantation damage in semiconductors by laser irradiation is described. A solid state laser emitting high intensity pulses at 0.53 micrometers and 1.06 micrometers was used in conjunction with an optical fiber delay line to examine the annealing characteristics of an As-implanted-silicon solar cell wafer. By varying the length of fiber and thereby varying the delay between pulses of the two wavelengths, it was determined that at 25 nsec delay, the sample surface is preheated by the 0.53 micrometers radiation to provide optimal coupling for the following 1.06 micrometers radiation. These results are in agreement with a theoretical model based on melting and liquid phase epitaxial regrowth. Calculations based on the model are presented.
- Publication:
-
Unknown
- Pub Date:
- June 1980
- Bibcode:
- 1980dwlt.rept.....C
- Keywords:
-
- Ion Implantation;
- Laser Annealing;
- Semiconductors (Materials);
- Absorptivity;
- Fiber Optics;
- Irradiation;
- Mathematical Models;
- Pulsed Lasers;
- Solar Cells;
- Solid State Lasers;
- Wavelengths;
- Solid-State Physics