Electronic properties of 3-5 semiconductor interfaces
Abstract
Final contract year dealt with dc transport in InP and GaAs device structures at low temperatures and high magnetic fields. Primary emphasis was on the mobility profile in field effect transistors, with secondary emphasis on basic bulk transport mechanisms. In previous years, studies were made of GaAs MIS structures, encapsulation of GaAs for annealing, and electronic profiling of InAs layers.
- Publication:
-
Final Report
- Pub Date:
- November 1980
- Bibcode:
- 1980csu..reptR....S
- Keywords:
-
- Carrier Mobility;
- Electrical Properties;
- Gallium Arsenides;
- Indium Phosphides;
- Jfet;
- Semiconductor Junctions;
- Direct Current;
- Epitaxy;
- Impurities;
- Transport Properties;
- Electronics and Electrical Engineering