Burst noise investigations on bipolar transistors in integrated circuits
Abstract
Burst noise as well as 1/f noise associated with bipolar transistors are identified as the main component of low frequency noise in certain amplifier and pulse processing circuits. This noise signal is correlated with the presence of heavy metal impurities in the vicinity of the emitter base insulating layer. The accumulation of these impurities was observed as being favored by epitaxial process induced crystal lattice defects. The use of Si planar technology with a horizontal reactor for epitaxy results in fewer crystal lattice defects. Simultaneously, an improved gettering process reduces the presence of heavy metal impurities. Enhanced integrated circuit yield is obtained.
- Publication:
-
Final Report AEG-Telefunken
- Pub Date:
- October 1980
- Bibcode:
- 1980aegt.rept.....H
- Keywords:
-
- Bipolar Transistors;
- Bursts;
- Electromagnetic Noise;
- Integrated Circuits;
- Process Control (Industry);
- Crystal Defects;
- Crystal Lattices;
- Getters;
- Impurities;
- Liquid Phase Epitaxy;
- Low Noise;
- Product Development;
- Electronics and Electrical Engineering