Silicon-gate CMOS devices with 300 Å gate oxides
Abstract
Polycrystalline silicon gate (phosphorus doped) complementary MOS structures were fabricated with gate oxide thicknesses down to 300 Å. Measurements of the oxide fixed charge, Qss, and of the back-gate bias dependence of the threshold voltage indicate an absence of phosphorus diffusion through the gate oxide during conventional processing.
- Publication:
-
Solid State Electronics
- Pub Date:
- November 1980
- DOI:
- 10.1016/0038-1101(80)90030-1
- Bibcode:
- 1980SSEle..23.1179L