Effect of mobile space-charge on the small-signal admittance of DDR silicon IMPATTs at high current densities
Abstract
Small-signal admittance calculations are presented for a symmetrical double-drift silicon IMPATT diode over a wide range of dc current density. Consideration is given to the behavior of high-current densities in the case of the widening of the central avalanche zone of DDR structures.
- Publication:
-
Solid State Electronics
- Pub Date:
- September 1980
- DOI:
- Bibcode:
- 1980SSEle..23.1001S
- Keywords:
-
- Avalanche Diodes;
- Electrical Impedance;
- High Current;
- Silicon Junctions;
- Space Charge;
- Computerized Simulation;
- Current Density;
- Doped Crystals;
- P-N Junctions;
- Performance Prediction;
- Threshold Currents;
- Electronics and Electrical Engineering