Chemical modification of the electrical properties of hydrogenated amorphous carbon films
Abstract
Semiconducting films of hydrogenated amorphous carbon (a-C:H), prepared via the dc glow discharge decomposition of C 2H 2, have been successfully doped via incorporation of B and P during growth. The doping efficiency achieved was comparable to that achieved in a-Si:H produced in a like manner. For a-C:H films deposited at Td=250 C, ?(RT) increased from 10 -12 to 10 -7 ohm -1 cm -1 when either 1% PH 3 or 10% B 2H 6 were added to the C 2H 2. A shift of the Fermi level E F of about 0.7 eV is inferred from changes in the "activation" energy of conduction.
- Publication:
-
Solid State Communications
- Pub Date:
- May 1980
- DOI:
- 10.1016/0038-1098(80)90144-1
- Bibcode:
- 1980SSCom..34..531M