Theory of Parametric Interactions in Semiconductors Under a Simultaneous Action of Two High-Power Electromagnetic Radiation Fields. II. Instability Analysis
Abstract
The parametric wave excitation process in saturated semiconductors is considered in the two-band model treated in the previous work [1]. Using the expressions for the generalized quantum distribution functions obtained there, the eigenmode problem is solved and the conditions of parametric excitation of certain resonant modes are analyzed. The analytical expression for the instability growth rate is obtained which shows the simultaneous action of two radiation fields on the parametric interaction process in the system. For illustrative purposes the numerical estimation is presented for a sample of GaAs.
- Publication:
-
Physica Scripta
- Pub Date:
- January 1980
- DOI:
- 10.1088/0031-8949/22/4/015
- Bibcode:
- 1980PhyS...22..411A