An experimental study of capless annealing of ion implanted gallium-arsenide
Abstract
The science and technology of ion implantation and its application to semiconductor electronics was examined. Doping by ion implantation was used as part of the processing for producing planar structures in GaAs. The capless annealing system consists of a graphite boat containing the implanted sample surrounded by crushed graphite and GaAs. Activations of 60% with correspondingly high mobilities were achieved with this annealing technique. The mobilities correspond to the limitation imposed by the implanted impurity density. Photoluminescence, C-V, Hall measurements, deep level transient spectroscopy and SIMS measurements were used to characterize the implanted and annealed layers.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1980
- Bibcode:
- 1980PhDT........88H
- Keywords:
-
- Annealing;
- Gallium Arsenides;
- Ion Implantation;
- Noise Spectra;
- Photoluminescence;
- Planar Structures;
- Semiconductors (Materials);
- Electronics and Electrical Engineering