A study of the device and materials related aspects of the microwave gallium arsenide power MESFET
Abstract
The problem in the area of power MESFETs related to both the device properties and the materials properties are addressed. Limits on drain source and drain gate breakdown voltages were extended by using a geometry with recessed active channel, a separately recessed gate, and extended drain to gate spacing. An investigation of the electrical behavior of the device by in-situ profiling of bulk high electric field regions and the surface voltage distribution revealed an avalanche mechanism as the cause of burnout. In order to study the leakage behavior the state of the art of the multiple well sliding boat liquid phase epitaxy system was advanced to grow MESFET device quality multiple layer structures with high purity GaAs buffer layers. Cr-doped semi-insulating buffer layers and high purity Ga sub 1-x Al sub-As buffer layers. Additional results are discussed.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1980
- Bibcode:
- 1980PhDT........48T
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Power Supply Circuits;
- Auger Spectroscopy;
- Electric Fields;
- Electrical Properties;
- Electron Avalanche;
- Electron Microscopy;
- Liquid Phase Epitaxy;
- P-N Junctions;
- Ternary Systems;
- Electronics and Electrical Engineering