The design of a 15 GHz high power GaAs FET
Abstract
Interest in power GaAs FETs is growing as higher frequency and higher power are continually reported. The paper reports on the design and performance of a Ku-band FET capable of 2.5-watt output power at 15 GHz. This result is obtained by a 'minimum parasitics' design rather than mere gate length reduction. The discussion covers device design in terms of material and fabrication, device assembly, and reliability. Numerous necessary tradeoffs between device parameters and structure are discussed.
- Publication:
-
Microwave Journal
- Pub Date:
- March 1980
- Bibcode:
- 1980MiJo...23...59D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Power Conditioning;
- Reliability Engineering;
- Amplifier Design;
- Circuit Reliability;
- Fabrication;
- Gates (Circuits);
- Performance Prediction;
- Schottky Diodes;
- Superhigh Frequencies;
- Tradeoffs;
- Electronics and Electrical Engineering