Detectivity limits for PbTe photovoltaic detectors
Abstract
The effect analyzed is that of the concentration dopants on the RoA product of PbTe abrupt junctions. Calculations are performed for temperatures 77, 200 and 300K. The influences of the diffusion current (for radiative and Auger recombination), of the tunneling and depletion layer currents are considered. The background-limited operation conditions for photovoltaic detectors at temperatures 77 and 200K are determined.
- Publication:
-
Infrared Physics
- Pub Date:
- July 1980
- DOI:
- 10.1016/0020-0891(80)90031-7
- Bibcode:
- 1980InfPh..20..223R
- Keywords:
-
- Electro-Optics;
- Infrared Radiation;
- Lead Tellurides;
- Performance Tests;
- Photovoltaic Conversion;
- Radiation Detectors;
- Auger Effect;
- Carrier Mobility;
- Dopes;
- P-N Junctions;
- Particle Diffusion;
- Photodiodes;
- Temperature Effects;
- Electronics and Electrical Engineering