Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources
Abstract
A method for calculating electron transport in layered materials is described. It is applied to a problem of radiation damage in MOS capacitors irradiated with a Cu x-ray tube operated at 45 kV. The effects of photoelectron transport are found to be significant. A problem of energy deposition in x-ray lithography is also discussed. The dose in the SiO2 gate is found to be about equal to that in the x-ray photoresist. Electron transport effects are found to be small in this lithography problem.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1980
- DOI:
- 10.1109/TNS.1980.4331052
- Bibcode:
- 1980ITNS...27.1465B
- Keywords:
-
- Metal Oxide Semiconductors;
- Photoelectrons;
- Radiation Damage;
- X Ray Apparatus;
- Capacitors;
- Electron Transfer;
- Gates (Circuits);
- Lithography;
- Electronics and Electrical Engineering