Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's
Abstract
The potential performances of Si, GaAs, GaInAs, and InAs semiconductor materials are compared by means of a simple self-consistent model involving the nonstationary electron dynamic effects. A criterion to predict their performance is proposed. It is shown that Ga0.47In0.53 and InAs are superior to all the other materials tested. However, in order to make use of the possibilities of these materials, it appears necessary to solve the problem of Schottky barriers or junctions or even heterojunctions for low-gap materials.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1980
- DOI:
- 10.1109/T-ED.1980.20166
- Bibcode:
- 1980ITED...27.2158C
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Schottky Diodes;
- Semiconductors (Materials);
- Silicon Junctions;
- Gates (Circuits);
- Microelectronics;
- Performance Prediction;
- Electronics and Electrical Engineering