A new solution for minority-carrier injection into the emtter of a bipolar transistor
Abstract
A new analytic solution for minority-carrier injection into the emitter of a bipolar transistor has been derived. Effects such as Shockley-Read-Hall (SRH) recombination, Auger recombination, bandgap narrowing, graded impurity profile, and position-dependent mobility have been included. A quantitative definition of 'transparency' in an emitter is presented. Numerical results show the appearance of a minimum in injected minority-carrier current with respect to the impurity concentration at the surface. This minimum is due to the interaction of Auger recombination and the built-in electric field as impurity concentration is increased. The relative ease and speed necessary to obtain numerical results makes this method very useful for the design and optimization of transistors.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1980
- DOI:
- 10.1109/T-ED.1980.20013
- Bibcode:
- 1980ITED...27.1231A
- Keywords:
-
- Bipolar Transistors;
- Carrier Injection;
- Electron Recombination;
- Emitters;
- Minority Carriers;
- Carrier Mobility;
- Design Analysis;
- Electric Fields;
- Impurities;
- Optimization;
- Electronics and Electrical Engineering