Numerical simulation and measurement of Gunn device dynamic microwave characteristics
Abstract
It is noted that important characteristics of Gunn devices such as output power, efficiency, and stability are determined by the large signal dynamic admittance of such devices. The paper devises an improved, implicit numerical simulation scheme that requires fewer approximations, gives higher accuracy results with less computational time, and that encounters fewer problems of simulation convergence. Results predicted by the model are compared with measured results for a 10-micron long GaAs device operating at 10 GHz at a 10-V dc bias. It is concluded that the observed results represent the best agreement yet achieved between a first principles theoretical model and actual data taken on an oscillating device.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- March 1980
- DOI:
- 10.1109/T-ED.1980.19897
- Bibcode:
- 1980ITED...27..546L
- Keywords:
-
- Computerized Simulation;
- Electronic Equipment Tests;
- Gunn Diodes;
- Microwave Circuits;
- Approximation;
- Dynamic Characteristics;
- Electric Fields;
- Electrical Impedance;
- Electrodynamics;
- Gallium Arsenides;
- Iterative Solution;
- Modal Response;
- Power Efficiency;
- Space Charge;
- Electronics and Electrical Engineering