Ion-implanted low-barrier PtSi Schottky-barrier diodes
Abstract
An ion-implanted, shallow n(+) layer has been used for lowering the barrier height of PtSi-n-Si Schottky diodes. Barrier height reductions up to 200 mV have been achieved with little degradation of the diode's reverse-current characteristics. During silicide formation, the implanted ions are 'pushed' ahead of the PtSi-Si reaction zone and pile up at the silicide-silicon interface, resulting in more barrier lowering than would be expected from the ion-implant dose. A model including the impurity pileup is presented and calculations based on the model are shown to be in reasonable agreement with experimental measurements.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1980
- DOI:
- 10.1109/T-ED.1980.19878
- Bibcode:
- 1980ITED...27..420B
- Keywords:
-
- Integrated Circuits;
- Ion Implantation;
- Schottky Diodes;
- Silicon Junctions;
- Volt-Ampere Characteristics;
- Contact Resistance;
- Metal Surfaces;
- Platinum Compounds;
- Silicides;
- Silicon Compounds;
- Electronics and Electrical Engineering