Bias-dependent 1/f noise model of an M.O.S. transistor
Abstract
A 1/f noise model of an M.O.S. transistor is developed which verifies previously observed dependences on the geometry and the density of surface states, but in addition predicts an explicit bias dependence. This model predicts that input 1/f voltage noise gradually increases as the gate voltage increases near threshold and continues to increase for gate voltages well above threshold. It also predicts a gradual decrease in noise as the drain voltage increases to saturation. These predictions are experimentally verified.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- April 1980
- Bibcode:
- 1980IPSSE.127...87B
- Keywords:
-
- Field Effect Transistors;
- Mathematical Models;
- Metal Oxide Semiconductors;
- Noise Spectra;
- Performance Prediction;
- Bias;
- Electromagnetic Noise Measurement;
- Saturation;
- Thresholds;
- Time Constant;
- Electronics and Electrical Engineering