Ultrashort laser - Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission
Abstract
Lasing was observed in a 4.5 micron thick GaAs MBE-grown heterostructure. The laser was driven by pulses from a mode-locked Ar laser (514.5 nm) with a maximum of 20 W peak power in 100 ps long pulses focused to 25 microns. The lasing occurred along the pump axis within a cavity defined by the coated AlGaAs surfaces.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- December 1980
- DOI:
- Bibcode:
- 1980IJQE...16.1283P
- Keywords:
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- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Laser Outputs;
- Lasing;
- Molecular Beam Epitaxy;
- Ultrashort Pulsed Lasers;
- Aluminum Gallium Arsenides;
- Argon Lasers;
- Emission Spectra;
- Laser Cavities;
- Laser Mode Locking;
- Laser Pumping;
- Lasers and Masers