Two-dimensional electron gas M.E.S.F.E.T. structure
Abstract
The first MESFET structure is reported in which the channel near pinch-off is occupied by a two-dimensional electron gas accumulated at the interface of a GaAs(N)-Al(x)Ga(1-x)As(N) heterojunction. Experimental data are in good agreement with theoretical calculations.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1980
- DOI:
- Bibcode:
- 1980ElL....16..667D
- Keywords:
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- Aluminum Gallium Arsenides;
- Electrical Resistivity;
- Electron Gas;
- Field Effect Transistors;
- Heterojunction Devices;
- N-N Junctions;
- Schottky Diodes;
- Capacitance;
- Doped Crystals;
- Gallium Arsenides;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering