A method to determine the parameters of the Si-SiO2 interface without gate
Abstract
A method of investigating properties of oxide layers and oxide-semiconductor interfaces is presented. The method is based on stationary conductance measurements of an inversion channel between two diffusion regions of structures without metal or polysilicon electrodes on SiO2. This permits the determination of the 'inherent' characteristics of the Si-SiO2 interface without the influence of the upper boundary; also, the absence of an electrode makes the structures particularly suitable for studying the effects of different radiation on the Si-SiO2 system.
- Publication:
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Bulgarian Journal of Physics
- Pub Date:
- 1980
- Bibcode:
- 1980BlJPh...7..375K
- Keywords:
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- Metal Oxide Semiconductors;
- Oxide Films;
- P-Type Semiconductors;
- Silicon Films;
- Silicon Oxides;
- Volt-Ampere Characteristics;
- Electric Charge;
- Integrated Circuits;
- Surface Properties;
- Electronics and Electrical Engineering