Analysis of the far-ultraviolet silicon lines in G dwarf stars
Abstract
The structure of the outer stellar regions is investigated for four G type dwarfs observed with the IUE satellite. Line fluxes of the Si II lines at 1817 A, 1808 A, and 1309 A and Si III at 1206 A are used to obtain temperatures and electronic densities. A temperature of 16,000 K is found from the lines at 1817 A and 1808 A, 26,000 K from the 1309 A line and 50,000 K from that at 1206 A. Predicted fluxes are compared with the observed ones. The significance of the results is discussed in terms of line formation regions.
- Publication:
-
Astronomy and Astrophysics
- Pub Date:
- February 1980
- Bibcode:
- 1980A&A....82..221F
- Keywords:
-
- Dwarf Stars;
- Far Ultraviolet Radiation;
- G Stars;
- Line Spectra;
- Silicon;
- Spectrum Analysis;
- Ultraviolet Spectra;
- Chromosphere;
- Emission Spectra;
- Iue;
- Spaceborne Astronomy;
- Stellar Temperature;
- Astrophysics