Indium phosphide for high frequency power transistors

This report covers the first year of studies aimed at determining the utility of InP for fabricating power microwave field effect transistors (FET). The initial phase of the work was concentrated on developing the technology necessary to complete a power FET based on current design philosophy. Ion implantation and vapor phase epitaxy (VPE) results are presented as a means for providing an active channel for the device. Further work is planned for VPE channels because of the potential benefits of buffer layers under development. Processing technology (etching, ohmic contacts) is reviewed. In addition, a review of gate technology is provided since this is the largest technology issue for the InP FET. The results of the gate studies has been a concentration of effort on developing a JFET during the conclusion of the program.