Techniques for the preparation and analysis of standard silicon semiconductor specimens for the ion microprobe mass analyzer
Abstract
A technique was developed to prepare sodium-, phosphorus-, arsenic-, antimony-, and gold-doped silicon and silicon dioxide reference specimens using ion-implantation techniques. The implants were done in small islands or microdots of various sizes to simulate geometries encountered in semiconductor integrated circuits. The number of dopant atoms per unit area was determined by neutron activation analysis. The reference specimens were applied to methods development and calibration of the ion microprobe mass analyzer (IMMA). IMMA detection limits were experimentally determined. A model for experimentally determining the parameters governing detection limits was developed.
- Publication:
-
Final Report Texas Instruments
- Pub Date:
- January 1979
- Bibcode:
- 1979ti...rept.....L
- Keywords:
-
- Microanalysis;
- Semiconductors (Materials);
- Silicon;
- Additives;
- Calibrating;
- Chemical Analysis;
- Ion Implantation;
- Mass Distribution;
- Methodology;
- Neutron Activation Analysis;
- Silicon Dioxide;
- Electronics and Electrical Engineering