Photoelectronic properties of zinc phosphide crystals, films and heterojunctions
Abstract
An increase in crystal growth rate for Zn3P2 was achieved by a vacuum baking step before crystal growth designed to reduce the pressure of excess gases in the ampoule. An analysis of the problem indicates that results are consistent with expectations. Samples have been submitted for mass spectroscopic evaluation and SIMS analysis. Construction of suitable equilibrium defect distribution diagrams for Zn3P2 was initiated. Good rectifying diodes were prepared by vacuum evaporation of Mg onto etched surfaces of Zn3P2. A barrier height of 0.75 eV was measured from C.V data in good agreement with the published value of 0.80EV. If the Zn3P2 surface was given a heat treatment in oxygen before Mg evaporation, the Mg made an ohmic contact indistinguishable from the normal treatment in hydrogen before Mg evaporation, good diode characteristics were observed, with strong forward current saturation above IV.
- Publication:
-
Stanford Univ. Report
- Pub Date:
- December 1979
- Bibcode:
- 1979stan.reptS....B
- Keywords:
-
- Crystal Growth;
- Phosphides;
- Semiconductor Junctions;
- Zinc Compounds;
- Barrier Layers;
- Contact Potentials;
- Diodes;
- Heat Treatment;
- Laser Heating;
- Rectifiers;
- Electronics and Electrical Engineering