Large scale integrated MOS-circuits with narrow structures: Artworks and masks
Abstract
Masks for large scale integrated (LSI) devices with more than 100,000 rectangles per artwork can be produced routinely with 1 micrometer features on large fields by light optical technology. The chiparea is limited by optics with 8 mm field to 5.2 mm x 5.2 mm. This area can be increased to at least 200 sq mm by composing with a positional and dimensional accuracy of + or - 0.4 micrometers. The medium defect densities for defect dimensions 1 micrometer are 0.3 holes/sq cm and 0.8 spots/sq cm. These values can be reduced to practically zero by the developed correction methods. In this way LSI suitable mastermasks can be produced with chromium or iron oxide layers.
- Publication:
-
Final Report Siemens A.G
- Pub Date:
- December 1979
- Bibcode:
- 1979siem.rept.....G
- Keywords:
-
- Large Scale Integration;
- Masking;
- Metal Oxide Semiconductors;
- Oxide Films;
- Accuracy;
- Optics;
- Photomasks;
- Electronics and Electrical Engineering