Lifetime control in silicon through focused laser beam damage
Abstract
Minority carrier lifetime and resistivity engineering in silicon through use of high power laser beams is described. Unique doping profiles are produced through 80 Kev As(+) implantations followed by laser annealing. Minority carrier lifetime distributions on silicon surfaces are substantially improved through laser damage gettering. Laser operating conditions to obtain optimum lifetime and resistivity engineering effects are given.
- Publication:
-
Final Report
- Pub Date:
- June 1979
- Bibcode:
- 1979ibm..reptQ....S
- Keywords:
-
- Annealing;
- Charge Carriers;
- High Power Lasers;
- Ion Implantation;
- Laser Damage;
- Silicon;
- Arsenic;
- Carrier Lifetime;
- Crystal Structure;
- Doped Crystals;
- Impurities;
- Life (Durability);
- Yag Lasers;
- Solid-State Physics