X-band GaAs MESFET oscillators for MIC purposes
Abstract
GaAs MESFETs with 200 micron gate width were examined for MIC oscillator purposes without using external high Q-resonators. Using the small signal equivalent circuit with 15 elements valid up to the X-band the small signal parameters were derived for different oscillator circuits. The field effect transistor was tested in common source, common gate and common drain operation. Best results could be achieved in common drain configuration using a capacitive load at the gate port and an inductive series feed back between drain and ground with the calculated output reflection coefficient in the order of ten.
- Publication:
-
8th European Microwave Conference
- Pub Date:
- 1979
- Bibcode:
- 1979eumw.conf..253S
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Oscillators;
- Schottky Diodes;
- Cavity Resonators;
- Equivalent Circuits;
- Gates (Circuits);
- Metal Surfaces;
- Spectral Reflectance;
- Superhigh Frequencies;
- Electronics and Electrical Engineering