Long-term dormant storage of microelectronic components

An analysis is presented of the long-term dormant storage test data experimentally accumulated on two microelectronic devices. All relevant information on the experimental test program was reviewed very carefully. The existence of error sources, anomalous data, and data acquisition discontinuities was identified. The unanticipated final result of the analysis was that the data collected was of an insufficient quality to enable the identification of any aging behavior as a function of time, temperature, or operational stress.