A new component for millimeter systems: The field effect transistor
Abstract
The possiblity of using field effect transistors (FET) for systems operating above 35 GHz was investigated as well as the development of devices for the I and J bands. The noise characteristics of gallium arsenide FET as determined in laboratory tests are discussed and the relative advantages of indium gallium arsenide and indium phosphide as candidate materials for millimeter devices are assessed.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- February 1979
- Bibcode:
- 1979STIN...7923272T
- Keywords:
-
- Components;
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Phosphides;
- Millimeter Waves;
- Electromagnetic Noise;
- Electron Mobility;
- Heterojunction Devices;
- Indium Arsenides;
- Communications and Radar