GaAs enhancement mode FET-tunnel diode ultra-fast low power inverter and memory cell
Abstract
A microtunnel diode load for a normally off enhancement mode gallium arsenide field effect transistor provides a compact inverter circuit of fast switching speed and low power consumption. Level shifting is not required, and direct coupling with multiple fan-out causes a comparatively small decrease in speed. The tunnel diode FET logic (TDFL) should be capable of operation at 2 GHz with a power-delay time product of 3.4 fJ for an output node capacitance of 50 fF. The negative characteristic of the tunnel diode combined with the FET provides a compact memory cell. However, advances in the state of the art for producing microtunnel diodes of precisely controlled peak current will be required before a viable TDFL can emerge.
- Publication:
-
NASA STI/Recon Technical Report A
- Pub Date:
- October 1979
- Bibcode:
- 1979STIA...8012855L
- Keywords:
-
- Computer Storage Devices;
- Field Effect Transistors;
- Gallium Arsenides;
- Inverters;
- Switching Circuits;
- Transistor Logic;
- Tunnel Diodes;
- Capacitance;
- Gates (Circuits);
- Microwave Circuits;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering