Structural characteristics of GaAs epitaxial films, grown on GaAs substrates highly doped with tellurium
Abstract
- Publication:
-
Poluprovodnikovaia Tekhnika i Mikroelektronika
- Pub Date:
- 1979
- Bibcode:
- 1979PolTM..30..110V
- Keywords:
-
- Doped Crystals;
- Epitaxy;
- Gallium Arsenides;
- Microstructure;
- Semiconducting Films;
- Additives;
- Substrates;
- Tellurium Alloys;
- Thin Films;
- Solid-State Physics