Schottky barriers on compound semiconductors. 1: HgSe highly electronegative contacts. 2: Au Schottky barriers on n-Ga(1-x)Al(x)As
Abstract
The HgSe is deposited on various semiconductors forming a semimetal/semiconductor Schottky barrier structure. Polycrystalline, evaporated HgSe produces larger Schottky barrier heights on n type semiconductors than does Au, the most electronegative of the elemental metals. The barrier heights are about 0.5 eV greater than those of Au on ionic semiconductors such as ZnS, and 0.1 to 0.2 eV greater for more covalently bonded semiconductors. The Schottky barrier height of Au on chemically etched N-Ga sub 1-x Al sub x As was measured as a function of x. As x increases, the barrier height rises to a value of about 1.2 eV at approximately equals 0.45, then decreases to about 1.0 eV as x approaches 0.83. The barrier height deviates in a linear way from the value predicted by the common anion rule as the AlAs mole fraction increases.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- February 1979
- Bibcode:
- 1979PhDT........40B
- Keywords:
-
- Electric Contacts;
- Gold;
- Mercury Compounds;
- Schottky Diodes;
- Semiconductors (Materials);
- Anions;
- Chemical Reactions;
- Epitaxy;
- Ionization Potentials;
- Selenides;
- Solid-State Physics