Quantum-efficiency spectrum of epitaxial structures for semitransparent photocathodes
Abstract
Theoretical and experimental results are reported on the quantum efficiency of two types of semitransparent photocathodes, which show narrow and broad ranges of spectral sensitivity. In the experiments Al(x)Ga(1-x)As-base structures with different types of buffer layers were studied: structure I in which the layer between the GaP substrate and the GaAs active layer is a solid solution Al(x)Ga(1-x)As (x = 0.7-0.8) of constant composition; and structure II in which the composition of the buffer layer varies continuously from x = 0.35 at the GaP boundary to x = 0 at the GaAs boundary. The quantum yield is determined by solving the diffusion equation for type I structures and the diffusion-drift equation for type II structures.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- September 1979
- Bibcode:
- 1979PZhTF...5.1036V
- Keywords:
-
- Aluminum Gallium Arsenides;
- Image Converters;
- Photocathodes;
- Quantum Theory;
- Semiconductor Devices;
- Electron Diffusion;
- Epitaxy;
- Photoelectric Emission;
- Solid Solutions;
- Electronics and Electrical Engineering