Designing megawatt diode duplexers
Abstract
For high-power duplexer applications, low-level diode insertion loss and power handling capability are the critical factors. Relevant tests are described for measurement of single diode loss (less than 0.1 dB) under reverse bias, measurement of the forward resistance (less than 0.5 ohms) at 224 MHz at typical forward bias, and determination of diode junction temperature rise as a function of dissipated RF power. Attention is given to final duplexer design and performance, with special emphasis on diode mount design, diode switch design, WR-4000 waveguide components, the driver circuit, and the complete duplexer.
- Publication:
-
Microwave Journal
- Pub Date:
- January 1979
- Bibcode:
- 1979MiJo...22...63T
- Keywords:
-
- Diodes;
- Duplexers;
- Microwave Equipment;
- Network Synthesis;
- Ohmic Dissipation;
- P-I-N Junctions;
- Switching Circuits;
- Capacitance;
- Equivalent Circuits;
- Temperature Effects;
- Electronics and Electrical Engineering