1-micron MOSFET VLSI technology. IV - Hot-electron design constraints
Abstract
An approach is described for determining the hot-electron-limited voltages for silicon MOSFETs of small dimensions. The approach was followed in determining the room-temperature and the 77 K hot-electron-limited voltages for a device designed to have a minimum channel length of 1 micron. The substrate hot-electron limits were determined empirically from measurements of the emission probabilities as a function of voltage using devices of reentrant geometry. The channel hot-electron limits were determined empirically from measurements of the injection current as a function of voltage and from long-term stress experiments. For the 1-micron design considered, the channel hot-electron limits are lower than the substrate hot-electron limits. The maximum voltage is 4.75 V at room temperature (25 C) and 3.5 V at 77 K. More details of the voltage limits as well as the approach for determining them are discussed. Examples of circuits designed with these devices to operate within these hot-electron voltage limits are also discussed.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- April 1979
- DOI:
- 10.1109/JSSC.1979.1051173
- Bibcode:
- 1979IJSSC..14..268N
- Keywords:
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- Field Effect Transistors;
- Hot Electrons;
- Large Scale Integration;
- Metal Oxide Semiconductors;
- Microelectronics;
- Design Analysis;
- Silicon Transistors;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering