1-micron MOSFET VLSI technology. I - An overview
Abstract
Various aspects of 1-micron MOSFET VLSI technology development are discussed briefly. These include device design, circuit design, hot-electron effects, processing technology, electron-beam lithography, metal silicide interconnections, and radiation effects.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- April 1979
- Bibcode:
- 1979IJSSC..14..240Y
- Keywords:
-
- Field Effect Transistors;
- Large Scale Integration;
- Metal Oxide Semiconductors;
- Microelectronics;
- Chips (Electronics);
- Hot Electrons;
- Lithography;
- Radiation Effects;
- Electronics and Electrical Engineering