Recombination enhanced annealing effect in AlGaAs/GaAs remote junction heterostructure lasers
Abstract
An attempt is made to simplify the observation of slow degradation of AlGaAs/GaAs DH lasers by using structure laser. This new device is tentatively called a 'remote junction heterostructure (RJH) laser', which structurally differs from the conventional DH lasers and is characterized by the presence of a thin clad layer between the active layer and the p-n junction. Owing to this structure, one can separate degradation in the active layer from degradation at the p-n junction. A simple phenomenological rate equation for point defect creation and annihilation is derived and solved, which satisfactorily explains the aging characteristics of the RJH lasers. These rates are deduced from comparison of the experiments with the theory. Applying the creation rate thus obtained to the conventional DH lasers, one can estimate, though very roughly at the present, the ultimate lifetime of the DH lasers.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- August 1979
- DOI:
- 10.1109/JQE.1979.1070098
- Bibcode:
- 1979IJQE...15..674K
- Keywords:
-
- Aging (Materials);
- Aluminum Gallium Arsenides;
- Annealing;
- Electron Recombination;
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Annihilation Reactions;
- P-N Junctions;
- Point Defects;
- Semiconductor Lasers;
- Threshold Currents;
- Vertical Distribution;
- Lasers and Masers