Ion-implanted GaAs X-band power F.E.T.s
Abstract
Active layers from GaAs power FETs have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique. Devices fabricated on these layers have up to 1.05 W/mm gate width at 10 GHz. This performance is equal to that of epitaxial devices.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1979
- DOI:
- 10.1049/el:19790414
- Bibcode:
- 1979ElL....15..576D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Microwave Equipment;
- Silicon;
- Chromium;
- Epitaxy;
- Power Efficiency;
- Superhigh Frequencies;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering