High-gain GaAs avalanche photodiodes with proton-implanted guard ring
Abstract
A GaAs avalanche photodiode with a multiplication factor as high as 8000 was prepared by Zn diffusion and proton double implantation. The proton-implanted guard ring completely prevented edge breakdown, and multiplication occurred uniformly over the junction area. Dark current was proved to be due to a leakage current at the periphery between junction and implanted layer.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1979
- DOI:
- 10.1049/el:19790385
- Bibcode:
- 1979ElL....15..535S
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- Photodiodes;
- Protons;
- Electric Current;
- Power Gain;
- Ring Structures;
- Silicon;
- Sulfur;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering