Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices
Abstract
The crystalline quality of s.o.s. layers can be improved near the silicon-sapphire interface by silicon implantation followed by recrystallisation. Device performance on such layers is markedly improved as to n-channel m.o.s.t. noise and leakage current, reverse diode current and lateral bipolar transistor gain. Minority-carrier lifetimes up to 50 ns are deduced.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1979
- DOI:
- 10.1049/el:19790380
- Bibcode:
- 1979ElL....15..527R
- Keywords:
-
- Bipolar Transistors;
- Electrical Properties;
- Field Effect Transistors;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Sos (Semiconductors);
- Annealing;
- Crystal Growth;
- Epitaxy;
- Noise Spectra;
- Power Spectra;
- Recrystallization;
- Temperature Effects;
- Electronics and Electrical Engineering