Flip-chip mounted GaAs power F.E.T. with improved performance in X- to Ku-band
Abstract
A GaAs power MESFET with a new structure has been developed, which allows extremely reduced source inductances and minimized thermal resistance. In the structure, the chip, with metal posts plated on the source, drain and gate pads, is connected directly to the package with no wire. The best results obtained were 2.5 W at 15 GHz and 4.1 W at 12 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1979
- DOI:
- 10.1049/el:19790331
- Bibcode:
- 1979ElL....15..461M
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Power Gain;
- Schottky Diodes;
- Chips (Electronics);
- Inductance;
- Power Conditioning;
- Power Efficiency;
- Superhigh Frequencies;
- Thermal Resistance;
- Electronics and Electrical Engineering