11 GHz and 12 GHz multiwatt internal matching for power GaAs F.E.T.s
Abstract
Multiwatt internal-matching techniques for multichip power GaAs F.E.T.s at 11 GHz and 12 GHz bands have been developed, adopting a lumped-element input circuit and a semidistributed output circuit. The internally matched device for the 11 GHz band exhibits 4 W power output with 3.4 dB associated gain, and the 12 GHz device 3.6 W power output with 3 dB associated gain.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1979
- DOI:
- 10.1049/el:19790232
- Bibcode:
- 1979ElL....15..326T
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Impedance Matching;
- Power Gain;
- Superhigh Frequencies;
- Centimeter Waves;
- Electrical Impedance;
- Equivalent Circuits;
- Frequency Response;
- Smith Chart;
- Electronics and Electrical Engineering