Low-barrier-height epitaxial Ge-GaAs mixer diodes
Abstract
Using a thin Ge-GaAs structure, barrier height lowering of 0.2-0.3 eV has been attained. These X-band diodes have a noise figure of 6.0-6.5 dB at 0.75-1.0 mW of local-oscillator power. The diodes have superior power-handling capability with Pt-Ti-Mo-Au metallisation.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1979
- DOI:
- 10.1049/el:19790230
- Bibcode:
- 1979ElL....15..324C
- Keywords:
-
- Barrier Layers;
- Epitaxy;
- Gallium Arsenides;
- Germanium;
- Mixers;
- Semiconductor Diodes;
- Gold;
- Metallizing;
- Microwave Oscillators;
- Mixing Circuits;
- Molybdenum;
- Platinum;
- Power Conditioning;
- Signal Mixing;
- Superhigh Frequencies;
- Titanium;
- Electronics and Electrical Engineering