C.C.D. transversal filter with a three-level polysilicon structure
Abstract
A transversal filter with a three-level polysilicon technique is fabricated to improve the double-split-electrode filter. This approach has several advantages over the double-split-electrode filter, such as better transfer efficiency, no charge redistribution, no edge effects and mask-misalignment-free structure.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1979
- DOI:
- Bibcode:
- 1979ElL....15..311T
- Keywords:
-
- Charge Coupled Devices;
- Frequency Response;
- Low Pass Filters;
- Polycrystals;
- Radio Filters;
- Silicon;
- Electrodes;
- Electronic Filters;
- Misalignment;
- Signal Processing;
- Electronics and Electrical Engineering