Some methods of dry etching of materials used in semiconductor structures and devices are described. The methods are compared with standard wet chemical treatments. The processes of plasma etching and stripping of photoresists are discussed in detail. Attention is paid also to the construction of etching equipment as well as to the technological conditions and results on etching of silicon, polysilicon and stripping of SCR photoresists. Finally, some accompanying effects and the influence of plasma on the etched materials and structures are summarized.
Ceskoslovensky Casopis pro Fyziku Sekce
- Pub Date:
- Plasma Chemistry;
- Semiconductors (Materials);
- Integrated Circuits;
- Electronics and Electrical Engineering