The effect of technology and parasitics on the noise behavior of GaAs MESFETs in the GHz-range
Abstract
The noise characteristics of the MESFETs are primarily determined by the interior noise sources and the small-signal parameters. The properties of the noise sources, on the other hand, are in the case of constant geometric conditions decisively affected by the technology. A theoretical analysis of the interior noise sources is in most cases conducted according to the noise model reported by Statz et al. (1974). The model is slightly modified to make it suitable for a dc analysis. The reported analysis confirms the expected connection between the noise characteristics and the parameters related to the technology and the circuit. It is, therefore, possible to provide rules for the layout and for the selection of optimal operational conditions. Rules for the selection of additional switching elements which improve the noise properties can also be given.
- Publication:
-
Archiv Elektronik und Uebertragungstechnik
- Pub Date:
- January 1979
- Bibcode:
- 1979ArElU..33...32T
- Keywords:
-
- Electromagnetic Noise;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Equipment;
- Schottky Diodes;
- Electrical Engineering;
- Electronic Equipment Tests;
- Microwave Circuits;
- Noise Generators;
- Noise Reduction;
- Noise Temperature;
- Signal To Noise Ratios;
- Electronics and Electrical Engineering