Noise in charge coupled devices
Abstract
The four general sources of noise in CCD are reviewed which are: signal input, signal output, dark current and trapping noise. The trapping noise in a Surface Channel CCD (SCCD) is mainly due to interface traps and is the dominant noise in this device. In the Buried Channel CCD (BCCD), the low density of bulk traps gives much less trapping noise. Theoretical RMS noise levels at the output are about 500 electrons/packet in a SCCD and 100 to 300 electrons/packet in a BCCD with comparable dynamic ranges. Noise in SCCD can be reduced by reducing interface state density during device fabrication.
- Publication:
-
Interim Report
- Pub Date:
- May 1978
- Bibcode:
- 1978uill.reptT....D
- Keywords:
-
- Charge Coupled Devices;
- Electromagnetic Noise;
- Information Theory;
- Signal To Noise Ratios;
- Channels;
- Charge Transfer;
- Clocks;
- Trapping;
- Electronics and Electrical Engineering