IC fabrication using electron-beam technology
Abstract
A new positive electron resist (TI-313) has been implemented for fabrication of 256-bit bipolar RAMs. This TI-313 resist has allowed plasma etching at each oxide removal step in the process. The pinhole data on this resist after oxide etch is comparable with that measured on the best standard negative photoresists. Previous attempts at fabricating the 256-bit bipolar RAMs have failed due to the high number of defects in the oxide caused by an inherent problem with PBS electron resist during wet etching. In addition, a change was made from the double-level metal 256-bit bipolar RAM (54S300) to the single-level metal 256-bit bipolar RAM (74S301A). This change was made because the TI-Houston production facility was achieving extremely low yields on the 54S200/300 and had discontinued production. These changes should allow fabrication of working devices during the next quarter.
- Publication:
-
Quarterly Report
- Pub Date:
- May 1978
- Bibcode:
- 1978ti...reptS....V
- Keywords:
-
- Electron Beams;
- Fabrication;
- Integrated Circuits;
- Microelectronics;
- Random Access Memory;
- Cost Reduction;
- Defects;
- Etching;
- Film Thickness;
- Oxides;
- Electronics and Electrical Engineering