Semiconductor laser technology: Stripe structure

Different types of stripe geometry lasers were analyzed and fabricated by the following methods: shallow proton implantation (no proton penetration in the active layer); deep proton implantation (proton penetration in the active layer); mesa etching (stripe obtained by chemical etching); and oxide isolation (local oxidation on the P side layer). The P.I characteristic (light power versus current intensity), near and far field diagram, astigmatism and thermal resistance of lasers were studied. The properties of the different types of lasers was made were examined, and their potential applications were determined. It is shown that shallow proton implantation is feasible for optical communication applications. Oxide isolation is relevant to fabrication of high light power emitting lasers.