Complementary DMOS-VMOS integrated circuit structure
Abstract
A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by forming a double diffusion along one edge of a V groove, or ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.
- Publication:
-
National Aeronautics and Space Administration Report
- Pub Date:
- October 1978
- Bibcode:
- 1978nasa.reptS....J
- Keywords:
-
- Cmos;
- Integrated Circuits;
- N-Type Semiconductors;
- Transistors;
- V Grooves;
- Boron;
- Ion Implantation;
- Patents;
- Substrates;
- Electronics and Electrical Engineering